Keynote speakers

Research and Development of SiC Power Semiconductor Devices

Hiroyuki Matsunami, Ph.D.
Emeritus Professor, Kyoto University, Japan

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Canceled. No show.
Towards A High Power Density EV/HEV Inverter by Customized SiC Power Module


Yong Kang, Ph.D.
Huazhong University of Science and Technology, China

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Innovative development trends of SiC power products in mass production

Chwan Ying Lee, Ph.D.
President, Hestia-Power Group, Taiwan

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Research activities to maximise the capability of new power devices

Ken Nakahara, Ph.D.
General Manager of Research and Development Center,
ROHM Co. Ltd, Japan

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Rapid Prototyping for SiC Electronics

Alan Montooth, Ph.D.
IEEE Fellow,
Past President of IEEE Power Electronics Society,
Distinguished Professor,
The Twenty-First Century Research Leadership Chair,
Department of Electrical Engineering,
University of Arkansas, USA

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Development of SiC devices and their applications

Takeshi Oi
Chief Engineer,
Advanced Technology R&D Center,
Mitsubishi Electric Corporation, Japan

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Reliability of GaN power transistors

Kenichiro Tanaka, Ph.D.
Energy Solutions Development Center,
Engineering Division,
Industrial Solutions Company,
Panasonic Corporation, Japan

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General Formula of SEB Failure Rate Calculation for Power Device

Ichiro Omura, Ph.D.
Professor,
Kyushu Institute of Technology, Japan

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The path forwar for GaN Power Devices

Alexander Lidow, Ph.D.
CEO and Co-founder of Efficient Power Conversion Corporation (EPC), USA

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Overview of diode-less SiC power module technology for high power density - devices and materials

Akio Shima, Ph.D.
Chief Researcher of Center for Technology Innovation-Electronics, Hitachi, Ltd. Research & Development Group, Japan

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