Keynote

• R&D of SiC Power Semiconductor Devices
  

  Prof. H. Matsunami, Kyoto University, Japan

  Chair: Prof. T. Funaki, Osaka University, Japan; Vice-chair: Prof. N. Satoh, Chiba Institute of Technology, Japan

• Canceledl. No show.
  Towards A High Power Density EV/HEV Inverter by Customized SiC Power Module
  

  Prof. K. Yong, Huazhong University of Science and Technology, China

  Chair: Prof. J. Itoh, Nagaoka University of Technology; Vice-chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan

• Innovative development trends of SiC power products in mass production
  

  President C. Y. Lee, Hestia-Power Group, Taiwan

  Chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan; Vice-chair: Prof. J. Itoh, Nagaoka University of Technology, Japan

• Research activities to maximise the capability of new power devices
  

  Dr. K. Nakahara, ROHM Co. Ltd, Japan

  Chair: Prof. T. Funaki, Osaka University, Japan; Vice-chair: Prof. N. Satoh, Chiba Institute of Technology, Japan

• Rapid Prototyping for SiC Electronics
  

  Prof. A. Mantooth, University of Arkansas, USA

  Chair: Prof. J. Itoh, Nagaoka University of Technology; Vice-chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan

• Development of SiC devices and their applications
  

  T. Oi, Mitsubishi Electric Co., Japan

  Chair: Prof. J. Itoh, Nagaoka University of Technology; Vice-chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan

• Reliability of GaN power transistors
  

  Dr. K. Tanaka, Panasonic Corporation., Japan

  Chair: Prof. N. Satoh, Chiba Institute of Technology, Japan; Vice-chair: Prof. T. Funaki, Osaka University, Japan

• General formula for SEB failure rate calculation for power devices
  

  Prof. I. Omura, Kyushu Institute of Technology, Japan

  Chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan; Vice-chair: Prof. J. Itoh, Nagaoka University of Technology, Japan

• The path forwar for GaN Power Devices
  

  CEO A. Lidow, EPC, USA

  Chair: Prof. N. Satoh, Chiba Institute of Technology, Japan; Vice-chair: Prof. T. Funaki, Osaka University, Japan

• Overview of diode-less SiC power module technology for high power density - devices and materials
  

  Dr. A. Shima, Hitachi, Ltd., Japan

  Chair: Prof. M. Shintani, Nara Institute of Science and Technology, Japan; Vice-chair: Prof. J. Itoh, Nagaoka University of Technology, Japan

Tutorial

• Power Digitization towards Power Integrated Circuit
  

  Prof. Takashi Hikihara, Kyoto University, Japan

  Chair: Prof. T. Sato, Kyoto University, Japan

• (Ultra) Wide Bandgap Material Process and Device TCAD Simulation Methodologies
  

  Prof. Hiu Yung Wong, San Jose State University, USA

  Chair: Prof. A. Castellazzi, Kyoto University of Advanced Science, Japan

Lecture

T1: Device Structures & Fabrication Techniques

Chair: Prof. W. Saito, Kyushu University, Japan; Vice-chair: Prof. K. Hasegawa, Kyushu Institute of Technology, Japan

• 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers Manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
  

  A. Agarwal, K. Han, B. Baliga, North Carolina State University, USA

• A Novel 600V Lateral RESURF 4H-SiC MESFET with Sloped Field Plate for High Power and High Frequency Applications
  

  A. Shimbori, A. Huang, University of Texas at Austin, USA

• Optimization of C Doped Buffer Layer to Minimize Current Collapse in Al_0.83In_0.17N/GaN HEMT by Studying Drain Lag Transients
  

  S. Mukherjee, S. Kanaga, N. DasGupta, A. DasGupta, Indian Institute of Technology Madras, India

• High Electron Mobility of 1880 cm²/V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer
  

  Y. Luo⁴⁾, I. Sanyal²⁾, W. Tzeng⁴⁾, Y. Ho⁴⁾, Y. Chang⁴⁾, C. Hsu³⁾, J. Chyi¹⁾, C. Wu⁴⁾, ¹⁾National Central University, Taiwan; ²⁾National Central Universityy, Taiwan; ³⁾National Chung-Shan Institute of Science and Technology, Taiwan; ⁴⁾National Taiwan University, Taiwan

• Characterization of Al-foil/p-4H-SiC SBDs Fabricated by DW with Variation of Process Conditions
  

  M. Ziko, A. Koel, T. Rang, Tallinn University of Technology, Estonia

T2: Device Characterization & Modeling I

Chair: Prof. K. Hasegawa, Kyushu Institute of Technology, Japan; Vice-chair: Prof. W. Saito, Kyushu University, Japan

• Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker
  

  T. Erlbacher²⁾, ¹⁾Fraunhofer Institute for Integrated Systems and Device Technology, Germany; ²⁾Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany

• Investigation of Power Semiconductor Devices Under Applying Voltage by Multi-Purpose Scanning Probe Microscope
  

  N. Satoh, A. Doi, H. Yamamoto, Chiba Institute of Technology, Japan

• Gate-Stress-Induced Threshold Voltage Instabilites, a Comparison of Ohmic and Schottky p-Gate GaN HEMTs
  

  T. Oeder, M. Pfost, TU Dortmund, Germany

• Design Space of Vertical Ga2O3 Junctionless FinFET and its Enhancement with Gradual Channel Doping
  

  A. Elwailly¹⁾, M. Xiao²⁾, Y. Zhang²⁾, H. Wong¹⁾, ¹⁾San Jose State University, USA; ²⁾Virginia Polytechnic Institute and State University, USA

• All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications
  

  Y. Wang, G. Lyu, J. Wei, Z. Zheng, K. Zhong, K. Chen, Hong Kong University of Science and Technology, Hong Kong

T3: Device Characterization & Modeling II

Chair: Prof. F. Richardeau, Laplace Laboratory – University of Toulouse – CNRS, France; Vice-chair: Dr. L. Maresca, University of Naples Federico II, Italy

• TCAD Model Calibration for the SiC/SiO2 Interface Trap Distribution of a Planar SiC MOSFET
  

  L. Maresca, I. Matacena, M. Riccio, A. Irace, G. Breglio, S. Daliento, University of Naples Federico II, Italy

• A Compact Device Model for SiC MOSFETs Valid for Wide-Temperature Range
  

  K. Shimozato, S. Bian, T. Sato, Kyoto University, Japan

• A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-Linear Parasitic Capacitance
  

  F. Hsu, C. Hung, K. Chu, L. Lee, C. Lee, Hestia Power Incorporated, Taiwan

F1: Applications I

Chair: Prof. J. Imaoka, Nagoya University, Japan; Vice-chair: Dr. E. Gurpinar, Oak Ridge National Lab, USA

• 48 V‒12 V Isolated-Type DC/DC Converter Miniaturized Using GaN Transistors and Operating at 2-MHz Switching Frequency
  

  K. Sakamoto, A. Yamaguchi, K. Nakahara, Rohm Co., Ltd, Japa

• Current and Voltage Hybrid Source Gate Driver for Maximizing the Switching Capability of SiC MOSFETs
  

  R. Ishido²⁾, Y. Okawauchi²⁾, K. Nakahara²⁾, S. Shirai¹⁾, M. Yamamoto¹⁾, ¹⁾Nagoya University, Japan; ²⁾Rohm Co., Ltd, Japan

• A Study on Suppressing Surge Voltage of SiC MOSFET Using Digital Active Gate Driver
  

  H. Takayama, T. Okuda, T. Hikihara, Kyoto University, Japan

• Cost Comparison Between GaN-Based and Si-Based 4.5-kW Single-Phase Inverters
  

  Z. Yang, J. Chen, P. Williford, F. Wang, University of Tennessee, USA

• Improved Control of GaN-Based Active-Clamped Flyback Converter with Shorter Reverse Conduction Time
  

  M. Chen, S. Xu, L. Huang, W. Sun, Southeast University, China

F2: Packaging & Passives

Chair: Dr. K. Saito, Hitachi Power Semiconductor Device Ltd., Japan; Vice-chair: Dr. A. Catalano, University of Naples Federico II, Italy

• Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module
  

  E. Gurpinar²⁾, R. Sahu2), B. Ozpineci²⁾, D. DeVoto¹⁾, ¹⁾National Renewable Energy Laboratory; ²⁾Oak Ridge National Laboratory, USA

• General Equation to Determine Design Rules for Mitigating Partial Discharge and Electrical Breakdown in Power Module Layouts
  

  S. Mukherjee, Y. Peng, A. Mantooth, University of Arkansas, USA

• Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs
  

  J. Wei¹⁾, M. Zhang²⁾, G. Lyu¹⁾, K. Chen¹⁾, ¹⁾Hong Kong University of Science and Technology, Hong Kong; ²⁾Shenzhen University, China

• Loss Model of High-Frequency Planar Transformer for High-Voltage Resonant DC/DC Converter
  

  J. Lin²⁾, Y. Yang¹⁾, S. Yin¹⁾, X. Xin¹⁾, R. Wang²⁾, M. Dong²⁾, H. Li²⁾, ¹⁾China Academy of Engineering Physics, China; ²⁾University of Electronic Science and Technology of China, China

• Parasitic Parameters Analysis and Design of Snubber Circuit on PCB for High-Frequency Wireless Power Transfer
  

  M. Yamaguchi, K. Kusaka, J. Itoh, Nagaoka University of Technology, Japan

F3: Applications II

Chair: Dr. E. Gurpinar, Oak Ridge National Lab, USA; Vice-chair: Prof. J. Imaoka, Nagoya University, Japan

• Optimization of 1-MW Solar Inverter with 1.7-kV SiC MOSFET Module
  

  K. Park²⁾, F. Kieferndorf¹⁾, R. Burkart¹⁾, B. Agostini¹⁾, ¹⁾ABB Corporate Research, Switzerland; ²⁾KAIST, Korea

• A Hybrid Half-Bridge LLC Resonant Converter and Phase Shifted Full-Bridge Converter for High Step-Up Application
  

  Y. Wei²⁾, Q. Luo¹⁾, A. Mantooth²⁾, ¹⁾Chongqing University, China; ²⁾University of Arkansas, USA

• A MATLAB GUI Program for LLC Resonant Converter
  

  Y. Wei²⁾, Z. Wang¹⁾, Q. Luo¹⁾, A. Mantooth²⁾, ¹⁾Chongqing University, China; ²⁾University of Arkansas, USA

F4: Harsh Environments & SOA

Chair: Dr. L. Maresca, University of Naples Federico II, Italy; Vice-chair: Prof. A. Castellazzi, Kyoto University of Advanced Science, Japan

• A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs
  

  H. Du, F. Iannuzzo, Aalborg University, Denmark

• Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source
  

  A. Kanale, B. Baliga, North Carolina State University, USA

Poster

T3-PD: Devices

Chairs: Dr. L. Maresca, University of Naples Federico II, Italy; Prof. F. Richardeau, Laplace Laboratory – University of Toulouse – CNRS, France

• A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence
  

  L. Han, L. Liang, Y. Kang, Huazhong University of Science and Technology, China

• Design and Fabrication for High-Voltage Silicon Carbide Drift Step Recovery Diode
  

  X. Yan, L. Liang, X. Huang, Huazhong University of Science and Technology, China

• 3.3-kV SiC MOSFET Performance and Short-Circuit Capability
  

  D. Xing²⁾, C. Xie²⁾, K. Wang²⁾, T. Liu²⁾, B. Hu²⁾, J. Wang²⁾, A. Agarwal²⁾, R. Singh¹⁾, S. Atcitty³⁾, ¹⁾GeneSiC Semiconductor, USA; ²⁾Ohio State University, USA; ³⁾Sandia National Laboratories, USA

• Optimization of Vertical GaN SGT-MOSFET for Low R_on
  

  N. Kumar Jaiswal²⁾, V. Ramakrishnan²⁾, S. Deb Roy¹⁾, ¹⁾Indian Institute of Science, India; ²⁾Vellore Institute of Technology, India

• Edge Termination Structures for 3.3 kV 4H-SiC Devices
  

  B. Dong²⁾, K. Lee²⁾, Y. Lai²⁾, C. Tzou²⁾, C. Hsu¹⁾, Y. Chen¹⁾, ¹⁾National Chung-Shan Institute of Science and Technology, Taiwan; ²⁾National Taiwan University, Taiwan

• Reliability Investigation on SiC Trench MOSFET Under Repetitive Surge Current Stress of Body Diode
  

  Z. Wang¹⁾, Y. Li¹⁾, X. Sun¹⁾, Z. Zhu²⁾, N. Ren²⁾, Q. Guo²⁾, Y. Liu¹⁾, ¹⁾Xi'an Jiaotong University, China; ²⁾Zhejiang University, China

• Experimental Investigation on Failure Mechanism of SiC Power MOSFETs Under Single Pulse Avalanche Stress
  

  Z. Gao, Q. Guo, N. Ren, K. Sheng, Zhejiang University, China

T3-PA: Applications

Chairs: Prof. J. Itoh, Nagaoka University of Technology, Japan; Prof. T. Sato, Kyoto University, Japan

• Common-Mode EMI Modeling and Analysis for GaN-Based Full-Bridge CRM PFC Under Unipolar PWM Scheme
  

  H. Zhu, B. Li, K. Wang, X. Yang, Xi'an Jiaotong University, China

• A Study on MHz Switching Operation in Flyback Converter for Lithium Ion Battery and its Parallelization
  

  K. Nakayama, N. Satoh, Chiba Institute of Technology, Japan

• Investigation of GaN and Si Based Full-Bridge Converters for DC Motor Drive
  

  X. Liu²⁾, S. Yin¹⁾, Y. Wu²⁾, M. Dong²⁾, H. Li²⁾, ¹⁾China Academy of Engineering Physics, China; ²⁾University of Electronic Science and Technology of China, China

• HESO: a Heterogeneous Energy Spreading Object - an Application of Power Packet Technology to Mobile Vehicle
  

  H. Arai, T. Matsuda, H. Takai, K. Nakayama, N. Satoh, Chiba Institute of Technology, Japan

• A 1 MHz Boost DC-DC Converter with Turn on ZCS Capability to Reduce EMI
  

  H. Yoshioka, J. Furuta, K. Kobayashi, Kyoto Institute of Technology, Japan

• Regulation of Parallel Connected Boost and Buck Converters by Passivity-Based Control
  

  Y. Murakawa, T. Hikihara, Kyoto University, Japan

• A Variable DC-Link Voltage Determination Method for Motor Drives with SiC MOSFETs
  

  T. Li, Y. Yang, C. Cheng, Y. Chen, National Taiwan University, Taiwan

• Variable Gate Voltage Control for Paralleled SiC MOSFETs
  

  Y. Wei, R. Sweeting, M. Hossain, H. Mhiesan, A. Mantooth, University of Arkansas, United States

• A Novel Non-Isolated GaN-Based DC-DC Converter with High Step-Down Gain
  

  L. Yu, C. Yang, S. Feng, F. Yan, X. Zhou, L. Wang, Xi'an Jiaotong University, China

• Design of a DC-DC Converter Using SiC Trench MOSFETs for EV Fast Chargers
  

  O. Karimzada³⁾, T. Uchida¹⁾, T. Masuda¹⁾, Y. Mori¹⁾, A. Shima¹⁾, G. De Donato²⁾, ¹⁾Hitachi, Ltd, Japan; ²⁾Sapienza University of Rome, Italy; ³⁾Sapienza University of Rome / Hitachi, Ltd, Italy

F3-PP: Packaging & Integration

Chairs: Dr. A. Catalano, University of Naples Federico II, Italy; Prof. A. Castellazzi, Kyoto University of Advanced Science, Japan

• Magnetic Integration for GaN-Based DC-DC Converters
  

  L. Yu, C. Yang, C. Li, M. Wu, X. Zhou, L. Wang, Xi'an Jiaotong University, China

• Design of Press-Pack Packaging for High Voltage SiC DSRD Stack
  

  Y. Yang²⁾, L. Liang²⁾, H. Shang²⁾, Y. Kang²⁾, H. Yan¹⁾, ¹⁾Changzhou Ruihua New Science & Technology Co., China; ²⁾Huazhong University of Science and Technology, China

• Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices
  

  B. Li, K. Wang, H. Zhu, X. Yang, L. Wang, Xi'an Jiaotong University, China

• The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines
  

  F. Yang, L. Jia, L. Wang, C. Zhao, J. Wang, T. Zhang, Y. Gan, H. Zhang, Xi'an Jiaotong University, China

• Design of Packaging Structure in High Voltage Power Modules to Avoid Surface Breakdown
  

  F. Yan, L. Wang, T. Yang, B. Wang, F. Yang, L. Yu, Xi'an Jiaotong University, China